? 2015 ixys corporation, all rights reserved v ces = 650v i c110 = 20a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.50v t fi(typ) = 28ns ds100576c(3/15) extreme light punch through igbt for 20-60khz switching symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 10 ? a t j = 150 ? c 400 ? a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 20a, v ge = 15v, note 1 2.27 2.50 v t j = 150 ? c 2.44 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 50 a i c110 t c = 110c 20 a i f110 t c = 110c 18 a i cm t c = 25c, 1ms 105 a i a t c = 25c 10 a e as t c = 25c 200 mj ssoa v ge = 15v, t vj = 150c, r g = 20 ? i cm = 40 a (rbsoa) clamped inductive load v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 200 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb weight to-263 2.5 g to-220 3.0 g xpt tm 650v igbt genx3 tm w/diode IXYA20N65C3D1 ixyp20n65c3d1 features ? optimized for 20-60khz switching ? square rbsoa ? avalanche rated ? anti-parallel fast diode ? short circuit capability ? international standard packages advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts ? high frequency power inverters g = gate c = collector e = emitter tab = collector to-263 aa (ixya) g c e to-220ab (ixyp) g e c (tab) c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXYA20N65C3D1 ixyp20n65c3d1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 20a, v ce = 10v, note 1 7 12 s c ie s 822 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 67 pf c res 19 pf q g(on) 30 nc q ge i c = 20a, v ge = 15v, v ce = 0.5 ? v ces 6 nc q gc 15 nc t d(on) 19 ns t ri 34 ns e on 0.43 mj t d(off) 80 ns t fi 28 ns e of f 0.35 0.65 mj t d(on) 18 ns t ri 33 ns e on 0.70 mj t d(off) 96 ns t fi 36 ns e off 0.40 mj r thjc 0.65 c/w r thcs to-220 0.50 c/w inductive load, t j = 25c i c = 20a, v ge = 15v v ce = 400v, r g = 20 ? note 2 inductive load, t j = 150c i c = 20a, v ge = 15v v ce = 400v, r g = 20 ? note 2 reverse diode (fred) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. v f i f = 20a, v ge = 0v, note 1 2.5 v t j = 150 ? c 1.5 v i rm 11 a t rr 135 ns r thjc 1.85 c/w i f = 20a, v ge = 0v, -di f /dt = 300a/ s, v r = 400v, t j = 150c dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 to-263 outline 1. gate 2. collector 3. emitter 4. collector bottom side to-220 outline pins: 1 - gate 2,4 - collector 3 - emitter
? 2015 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 8v 7v 9v 11v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 8v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 5 10 15 20 25 30 35 40 00.511.522.533.544.5 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 9v 11v 8v 10v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 20a i c = 10a i c = 40a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 40a t j = 25oc 20a 10a fig. 6. input admittance 0 10 20 30 40 50 60 4 5 6 7 8 9 10 11 12 13 v ge - volts i c - amperes t j = 150oc 25oc - 40oc IXYA20N65C3D1 ixyp20n65c3d1
ixys reserves the right to change limits, test conditions, and dimensions. IXYA20N65C3D1 ixyp20n65c3d1 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc v ce = 10v fig. 10. reverse-bias safe operating area 0 10 20 30 40 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 20 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 4 8 121620242832 q g - nanocoulombs v ge - volts v ce = 325v i c = 20a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limi t 100s dc fig. 12. maximum transient thermal impedance (igbt) 0.01 0.1 1 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 pulse width - second z (th)jc - oc / w d = t p / t t p t d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse
? 2015 ixys corporation, all rights reserved fig. 13. inductive switching energy loss vs. gate resistance 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 20 30 40 50 60 70 80 90 100 r g - ohms e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 20a i c = 40a fig. 16. inductive turn-off switching times vs. gate resistance 20 25 30 35 40 45 50 55 20 30 40 50 60 70 80 90 100 r g - ohms t f i - nanoseconds 60 90 120 150 180 210 240 270 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 20a i c = 40a fig. 14. inductive switching energy loss vs. collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 15 20 25 30 35 40 i c - amperes e off - millijoules 0.0 0.4 0.8 1.2 1.6 2.0 2.4 e on - millijoules e off e on - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e on - millijoules e off e on - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 20a i c = 40a fig. 17. inductive turn-off switching times vs. collector current 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 i c - amperes t f i - nanosecond s 60 70 80 90 100 110 120 130 t d(off) - nanoseconds t f i t d(off) - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductiv e turn-off switching times v s. junction temperature 20 24 28 32 36 40 44 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 64 72 80 88 96 104 112 t d(off) - nanoseconds t f i t d(off) - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 20a i c = 40a IXYA20N65C3D1 ixyp20n65c3d1
ixys reserves the right to change limits, test conditions, and dimensions. IXYA20N65C3D1 ixyp20n65c3d1 fig. 20. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 100 10 15 20 25 30 35 40 i c - amperes t r i - nanosecond s 10 12 14 16 18 20 22 24 26 28 30 t d(on) - nanoseconds t r i t d(on) - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 10 14 18 22 26 30 34 t d(on) - nanoseconds t r i t d(on) - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 40a i c = 20a fig. 19. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 20 30 40 50 60 70 80 90 100 r g - ohms t r i - nanosecond s 0 20 40 60 80 100 120 140 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 40a i c = 20a fig. 22. diode forward characteristics 0 5 10 15 20 25 30 35 40 00.5 11.5 22.5 v f (v) i f (a) t j = 150oc t j = 25oc fig. 23. reverse recovery charge vs. -di f /dt 0.4 0.6 0.8 1.0 1.2 1.4 1.6 200 300 400 500 600 700 800 900 1000 1100 1200 -di f / dt (a/s) q rr (c) t j = 150oc v r = 400v i f = 30a 20a 10a
? 2015 ixys corporation, all rights reserved ixys ref: ixy_20n65c3(3d) 01-21-15-b fig. 13. maximum transient thermal impedance 0.01 0.1 1 10 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 pulse width - second z (th)jc - oc / w fig. 27. maximum transient thermal impedance (diode) aaaaa 4 d = t p / t t p t d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse fig. 24 reverse recovery current vs. -di f /dt 8 10 12 14 16 18 20 22 24 26 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 di f /dt (a/s) i rr (a) t j = 150oc v r = 400v i f = 40a 20a 10a fig. 25. reverse recovery time vs. -di f /dt 60 80 100 120 140 160 180 200 300 400 500 600 700 800 900 1000 1100 1200 -di f /dt (a/s) t rr (ns) t j = 150oc v r = 400v i f = 40a 20a 10a fig. 26. dynamic parameters q rr, i rr vs. junction temperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 400v i f = 20a -dif /dt = 300a/s fig. 28. cauer thermal network igbt i ri ( c/w ) ci (j/ c ) 1 0.170320 0.0017715 2 0.136990 0.0166820 3 0.090011 0.0391660 diode i ri ( c/w ) ci (j/ c ) 1 0.331730 0.0002858 2 0.768860 0.0037423 3 0.285550 0.0432130 IXYA20N65C3D1 ixyp20n65c3d1
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